TCAD-Based Predictive NBTI Framework for Sub-20-nm Node Device Design Considerations-Reference-Cited by-同舟云学术

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TCAD-Based Predictive NBTI Framework for Sub-20-nm Node Device Design Considerations

Published:2016-12 Issue:12 Volume:63 Page:4624-4631
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Mishra Subrat^ORCID,Wong Hiu Yung^ORCID,Tiwari Ravi,Chaudhary Ankush^ORCID,Rao Rakesh,Moroz Victor,Mahapatra Souvik

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7739934/07589064.pdf?arnumber=7589064

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Aggravated NBTI reliability due to hard-to-detect open defects;Microelectronics Reliability;2024-09

2. Optimization of Negative Differential Conductance (NDC) Point for Multi Gate Devices Considering Self Heating Effects Using Surface to Volume Ratio (SVR);Springer Proceedings in Physics;2024

3. Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling;Micromachines;2022-08-11

4. Negative-Bias Temperature Instability of p-GaN Gate GaN-on-Si Power Devices;IEEE Transactions on Device and Materials Reliability;2022-06

5. Comparative Analysis of Hot Carrier Degradation (HCD) in 10-nm Node nMOS/pMOS FinFET Devices;IEEE Transactions on Electron Devices;2020-12

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