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Silicon Carbide Fully Differential Amplifier Characterized Up to 500 °C

  • Published:2016-06 Issue:6 Volume:63 Page:2242-2247
  • ISSN:0018-9383
  • Container-title:IEEE Transactions on Electron Devices
  • language:
  • Short-container-title:IEEE Trans. Electron Devices

Author:

Tian Ye,Lanni Luigia,Rusu Ana,Zetterling Carl-Mikael

Funder

Stiftelsen för Strategisk Forskning through the HOTSiC Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Class AB Differential Stage on Complementary Field-Effect Transistors (CJFET, CCMOS) and Inclusion Schemes in Micro-Power High-Speed Operational Amplifiers;2024 Wave Electronics and its Application in Information and Telecommunication Systems (WECONF);2024-06-03

2. Method for Reducing the Zero Level of Gallium-Arsenide Operational Amplifiers Based on “Folded” Cascodes without Current Mirrors;2024 Conference of Young Researchers in Electrical and Electronic Engineering (ElCon);2024-01-29

3. Analytical Approach Towards Low Power Device (Differential Amplifier) Using DG MOSFET;2023 31st Southern African Universities Power Engineering Conference (SAUPEC);2023-01-24

4. A 60-MHz Silicon Carbide Voltage-Controlled Oscillator for Extreme Temperature Applications;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-01

5. A silicon carbide high gain differential amplifier for extreme temperature applications;Microelectronics Journal;2022-12
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