Analytical Approach Towards Low Power Device (Differential Amplifier) Using DG MOSFET-Reference-Cited by-同舟云学术

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Analytical Approach Towards Low Power Device (Differential Amplifier) Using DG MOSFET

Published:2023-01-24 Issue: Volume: Page:
ISSN:
Container-title:2023 31st Southern African Universities Power Engineering Conference (SAUPEC)
language:
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Author:

Tekisi Thabiso¹,Srivastava Viranjay M.¹

Affiliation:

1. Howard College, University of KwaZulu-Natal,Department of Electronic Engineering,Durban,South Africa,4041

Funder

University of KwaZulu-Natal

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10057588/10057602/10057691.pdf?arnumber=10057691

Reference22 articles.

1. BF909;BF909R N-channel dual gate MOS-FETs datasheet,0

2. BF998; BF998R Silicon N-channel dual gate MOSFET datasheet;NXP Semiconductor,1996

3. A DC offset and CMRR analysis in a CMOS 0.35?m operational transconductance amplifier using Pelgrom's area/accuracy tradeoff;pablo;Microelectronics Journal,2008

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transient Analysis of Differential Amplifier Using Double-Gate MOSFET;2023 International Conference on Electrical, Computer and Energy Technologies (ICECET);2023-11-16

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