Room-Temperature GaAs/AlGaAs Quantum Cascade Lasers Grown by Metal–Organic Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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Room-Temperature GaAs/AlGaAs Quantum Cascade Lasers Grown by Metal–Organic Vapor Phase Epitaxy

Published:2011-06 Issue:12 Volume:23 Page:774-776
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Krysa A B,Revin D G,Commin J P,Atkins C N,Kennedy K,Yang Qiu ,Walther T,Cockburn J W

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/68/5768109/05742679.pdf?arnumber=5742679

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain-modified effective two-band model for calculating the conduction band structure of strain-compensated quantum cascade lasers: effect of strain and remote band on the electron effective mass and nonparabolicity parameter;Optics Express;2021-11-23

2. Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE;Crystals;2019-06-14

3. A GaInAs/AlInAs quantum cascade laser with an emission wavelength of 5.6 μm;Quantum Electronics;2018-05-29

4. Above room temperature operation of InGaAs/AlGaAs/GaAs quantum cascade lasers;Semiconductor Science and Technology;2018-02-05

5. Self-consistent electro-opto-thermal model of quantum cascade lasers with coupled electron and phonon interactions far from equilibrium;Optics Communications;2017-12

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