Single-Event Upset in 3-D Charge-Trap NAND Flash Memories-Reference-Cited by-同舟云学术

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Single-Event Upset in 3-D Charge-Trap NAND Flash Memories

Published:2022-11 Issue:11 Volume:69 Page:6089-6094
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Park Jounghun¹^ORCID,Han Jin-Woo²^ORCID,Yoon Gilsang¹^ORCID,Go Donghyun¹^ORCID,Kim Donghwi¹^ORCID,Kim Jungsik³^ORCID,Lee Jeong-Soo¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea

2. Center for Nanotechnology, NASA Ames Research Center, Moffett Field, CA, USA

3. Department of Electrical Engineering, Gyeongsang National University, Jinju, Republic of Korea

Funder

Samsung-POSTECH Research Center

Samsung Electronics

National Research Foundation of Korea (NRF) grant

Korean Government

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9926983/09903560.pdf?arnumber=9903560

Reference21 articles.

1. Radiation induced soft errors in 16 nm floating gate SLC NAND flash memory

2. Heavy-Ion Induced Threshold Voltage Shifts in Sub 70-nm Charge-Trap Memory Cells

3. Analysis and Compact Modeling of Fast Detrapping From Bandgap-Engineered Tunneling Oxide in 3-D NAND Flash Memories

4. Extraction of Nitride Trap Profile in 3-D NAND Flash Memory Using Intercell Program Pattern

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimal Machine Learning Model for the Relationship Between Grain Size, Channel Thickness, and Grain Boundary Trap Density in 3D NAND Strings;2023 International Conference on Electrical, Electronics, Communication and Computers (ELEXCOM);2023-08-26

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