Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control Over the 2-DEG-Reference-Cited by-同舟云学术

Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control Over the 2-DEG

Published:2022-03 Issue:3 Volume:69 Page:1608-1611
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Dutta Gupta Sayak¹^ORCID,Joshi Vipin¹^ORCID,Chaudhuri Rajarshi Roy¹^ORCID,Shrivastava Mayank¹^ORCID

Affiliation:

1. Department of Electronic Systems Engineering, Indian Institute of Science, Bengaluru, India

Funder

Department of Science and Technology (DST), Government of India, under their Core Research Grant (CRG) and Advanced Manufacturing Technology (AMT) Programs

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9722602/09697090.pdf?arnumber=9697090

Reference26 articles.

1. Suppression of current collapse in AlGaN/GaN MISHFET with carbon- doped GaN/undoped GaN multi-layered buffer structure

2. Part I: Physical Insight Into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs

3. Part II: Proposals to Independently Engineer Donor and Acceptor Trap Concentrations in GaN Buffer for Ultrahigh Breakdown AlGaN/GaN HEMTs

4. Analysis of Reduction in Lag Phenomena and Current Collapse in Field-Plate AlGaN/GaN HEMTs With High Acceptor Density in a Buffer Layer

5. Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiNx Deposition

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamic R_ON Degradation Suppression by Gate Field Plate in Partially Recessed AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors;physica status solidi (a);2024-06-11

2. Dynamic R_ON Degradation in AlGaN/GaNMIS-HEMTs With Si₃N₄ or Si₃N₄/ZrO₂Passivation Layer;IEEE Transactions on Electron Devices;2024-05

3. Mechanisms of Step-Stress Degradation in Carbon-Doped 0.15-μm AlGaN/GaN HEMTs for Power RF Applications;IEEE Transactions on Device and Materials Reliability;2023-12

4. Small V _th Shift and Low Dynamic R _on in GaN MOSHEMT With ZrO₂ Gate Dielectric;IEEE Transactions on Electron Devices;2023-11

5. Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic R _ON of AlGaN/GaN HEMTs Under Semi-on State;IEEE Transactions on Electron Devices;2022-12