Novel Snapback-Free Shorted-Anode SOI-LIGBT With Shallow Oxide Trench and Adaptive Electron Channel-Reference-Cited by-同舟云学术

Novel Snapback-Free Shorted-Anode SOI-LIGBT With Shallow Oxide Trench and Adaptive Electron Channel

Published:2023-01 Issue:1 Volume:70 Page:185-190
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wu Lijuan¹^ORCID,Song Xuanting¹^ORCID,Zhang Banghui¹,Liu Heng¹,Liu Qing¹,Liu Yangzhi¹,Qiu Tao¹

Affiliation:

1. Hunan Provincial Key Laboratory of Flexible of Electronic Materials Genome Engineering, School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha, China

Funder

Hunan Provincial Natural Science Foundation of China

Scientific Research Fund of Hunan Provincial Education Department

Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering’s Open Fund Project-2020

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10004030/09964232.pdf?arnumber=9964232

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4. A Snapback-Free Fast-Switching SOI LIGBT With an Embedded Self-Biased n-MOS

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