Coexistence of Space Charge Limited and Variable Range Hopping Conduction Mechanism in Sputter-Deposited Au/SiC Metal–Semiconductor

Coexistence of Space Charge Limited and Variable Range Hopping Conduction Mechanism in Sputter-Deposited Au/SiC Metal–Semiconductor–Metal Device

Author:

Arora Alisha¹^ORCID,Mourya Satyendra²^ORCID,Singh Neetika³,Kumar Sandeep⁴^ORCID,Chandra Ramesh¹^ORCID,Malik V. K.¹^ORCID

Affiliation:

1. Indian Institute of Technology Roorkee, Roorkee, India

2. Birla Institute of Technology and Science Pilani, Pilani, India

3. Department of Chemical Engineering, Ben Gurion University of Negev, Be’er Sheva, Israel

4. Department of Physics, Central University of Rajasthan, Ajmer, India

Funder

University Grants Commission

Indian Institute of Technology Roorkee

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

Reference44 articles.

2. Space charge limited conduction in ultrathin PbS quantum dot solid diodes;kim;J Appl Phys,2014

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3. In situ electrical characterization of the Au/n-Si Schottky barrier structure under 1.2 MeV Ar ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-07