Characterization of SiO2/SiC interface states and channel mobility from MOSFET characteristics including variable-range hopping at cryogenic temperature-Reference-Cited by-同舟云学术

Characterization of SiO2/SiC interface states and channel mobility from MOSFET characteristics including variable-range hopping at cryogenic temperature

Published:2018-04 Issue:4 Volume:8 Page:045217
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Funder

New Energy and Industrial Technology Development Organization

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5027695

Reference34 articles.

1. Fundamentals of Silicon Carbide Technology

2. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

3. Effects of Nitridation on 4H-SiC MOSFETs Fabricated on Various Crystal Faces

4. Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(0001̄) face

5. Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC($000\bar{1}$) Metal–Oxide–Semiconductor Field-Effect Transistors

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1. Design and Simulation of Bi-Layer Optimized High K- Dielectric Medium for N-Mosfet with Wild Horse Optimization to Improve Electrical Characteristics;ECS Journal of Solid State Science and Technology;2024-07-01

2. Energy levels of carbon dangling-bond center (PbC center) at 4H-SiC(0001)/SiO2 interface;APL Materials;2023-11-01

3. Sources of error and methods to improve accuracy in interface state density analysis using quasi-static capacitance–voltage measurements in wide bandgap semiconductors;Journal of Applied Physics;2023-09-25

4. Effect of nitrogen introduced at the SiC/SiO₂interface and SiC side on the electronic states by first-principles calculation;Japanese Journal of Applied Physics;2023-06-01

5. Atomic scale localization of Kohn–Sham wavefunction at SiO2/4H–SiC interface under electric field, deviating from envelope function by effective mass approximation;Applied Physics Letters;2023-05-29