Physical Transient Model of IGBT in Forward Conduction Mode
Author:
Affiliation:
1. State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, Wuhan, China
2. Hefei University of Technology, Hefei, China
3. State Grid Corporation of China, Beijing, China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9802454/09786008.pdf?arnumber=9786008
Reference33 articles.
1. An Improved Fourier-Series-Based IGBT Model by Mitigating the Effect of Gibbs Phenomenon at Turn on
2. A Datasheet Driven Unified Si/SiC Compact IGBT Model for N-Channel and P-Channel Devices
3. Modeling Inductive Switching Characteristics of High-Speed Buffer Layer IGBT
4. An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modeling and Analysis of IGBT Based on Two-Dimensional Charge Distribution;IEEE Transactions on Power Electronics;2024-11
2. An Analytical Temperature-Dependent Turn-Off Model for High-Voltage Field-Stop IGBTs Considering the Influence of Drive Circuit;IEEE Transactions on Power Electronics;2024-08
3. Improved HVIGBT Transient Modeling Method Based on Hefner Model;2023 2nd Asia Power and Electrical Technology Conference (APET);2023-12-28
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3