Trap Behavior of the Optical Power Fluctuation in AlGaN-Based UV-C LEDs Degradation-Reference-Cited by-同舟云学术

Trap Behavior of the Optical Power Fluctuation in AlGaN-Based UV-C LEDs Degradation

Published:2023-02 Issue:2 Volume:70 Page:570-575
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Su Mengwei¹^ORCID,Liu Hongxia¹,Cai Ming¹,Sun Wenhong²^ORCID

Affiliation:

1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China

2. Research Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning, China

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10025571/09980530.pdf?arnumber=9980530

Reference40 articles.

1. Evidence of minority carrier traps contribution in deep level transient spectroscopy measurement in n–GaN Schottky diode

2. Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy

3. Current-induced degradation of high performance deep ultraviolet light emitting diodes

4. Degradation analysis with characteristics and simulations of 265 nm UV-C LED

5. Carrier distribution characteristics of AlGaN-based ultraviolet light-emitting diodes at elevated temperatures

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1. Effect of Trap Behavior on Recombination in AlGaN-Based UV-C LEDs Degradation;IEEE Transactions on Electron Devices;2024-03

2. Review—Reliability and Degradation Mechanisms of Deep UV AlGaN LEDs;ECS Journal of Solid State Science and Technology;2023-05-31