Frequency Doubler Based on Ferroelectric Tunnel Field-Effect Transistor-Reference-Cited by-同舟云学术

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Frequency Doubler Based on Ferroelectric Tunnel Field-Effect Transistor

Published:2022-07 Issue:7 Volume:69 Page:4046-4049
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kim Hyunwoo¹^ORCID,Kwak Been²^ORCID,Kim Jang Hyun³^ORCID,Kwon Daewoong²^ORCID

Affiliation:

1. School of Electronic and Electrical Engineering, Hankyong National University, Anseong, South Korea

2. Department of Electrical Engineering, Inha University, Incheon, South Korea

3. School of Electrical Engineering, Pukyong National University, Busan, South Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9802454/09774844.pdf?arnumber=9774844

Reference18 articles.

1. A high-performance top-gate graphene field-effect transistor based frequency doubler

2. Large Signal Operation of Small Band-Gap Carbon Nanotube-Based Ambipolar Transistor: A High-Performance Frequency Doubler

3. Reconfigurable frequency multiplication with a ferroelectric transistor

4. GaSb-InAs n-TFET With Doped Source Underlap Exhibiting Low Subthreshold Swing at Sub-10-nm Gate-Lengths

5. P-channel Tunneling Field Effect Transistor (TFET): Sub-10nm technology enablement by GaSb-InAs with doped source underlap

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Suppression of Gate-Induced-Drain-Leakage Utilizing Local Polarization in Ferroelectric-Gate Field-Effect Transistors for DRAM Applications;IEEE Electron Device Letters;2024-05

2. Frequency doubler utilizing hetero gate dielectric tunnel field-effect transistor;Physica Scripta;2024-03-22

3. Signal-Processing Application Based on Ferroelectric Tunnel Field-Effect Transistor;IEEE Transactions on Nanotechnology;2024

4. Optimization of tunneling current in ferroelectric tunnel FET using genetic algorithm;The Journal of Supercomputing;2023-04-21

5. Sensing single domains and individual defects in scaled ferroelectrics;Science Advances;2023-02-03

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