Analog Circuits Using Double-Gate Multilayer MoS<sub>2</sub> Field-Effect Transistor for Sensor Applications-Reference-Cited by-同舟云学术

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Analog Circuits Using Double-Gate Multilayer MoS₂ Field-Effect Transistor for Sensor Applications

Published:2022-06 Issue:6 Volume:69 Page:3470-3476
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Vasishta Sudhanva¹^ORCID,Wang Xiao¹^ORCID,Rodder Michael¹^ORCID,Raghunandan K. R.²,Viswanathan T. R.¹,Dodabalapur Ananth¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, USA

2. Skyworks Solutions, Inc, Austin, TX, USA

Funder

National Science Foundation

Texas Nanofabrication Facility funded by NSF

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/16/9780469/9769750-aam.pdf

Reference23 articles.

1. Flicker noise in CMOS transistors from subthreshold to strong inversion at various temperatures

2. 1/f noise in mos devices, mobility or number fluctuations?;vandamme;IEEE Transactions on Electron Devices,1994

3. Symmetry of Gating in Double-Gate MoS2 FETs

4. Tunable Low-Frequency Noise in Dual-Gate MoS2Transistors

5. Reduction of hysteresis in MoS 2 transistors using pulsed voltage measurements

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quasi-1-Dimensional Dual-Gate MoS₂ Field-Effect Transistors with 50 nm Channel Length;ACS Applied Nano Materials;2023-08-07

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