Substrate and Trench Design for GaN-on-EBUS Power IC Platform
Author:
Affiliation:
1. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, SAR, China
2. School of Integrated Circuits, Peking University, Beijing, China
Funder
Hong Kong Research Grants Council’s Research Impact Fund
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9802454/09790852.pdf?arnumber=9790852
Reference25 articles.
1. GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion
2. 1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform
3. GaN Integrated Bridge Circuits on Bulk Silicon Substrate: Issues and Proposed Solution
4. A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTs
5. C$\text{C}_{oss}$ related energy loss in power MOSFETs used in zero-voltage-switched applications;fedison;Proc IEEE Appl Power Electron Conf Expo (APEC),2014
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1. GaN on Engineered Bulk Silicon Power Integration Platform With Avalanche Capability Enabled by Built-in Si PN Junctions;IEEE Electron Device Letters;2022-11
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