Analytical Modeling of Potential Barrier for Charge Transfer in Pinned Photodiode CMOS Image Sensors-Reference-Cited by-同舟云学术

Analytical Modeling of Potential Barrier for Charge Transfer in Pinned Photodiode CMOS Image Sensors

Published:2022-10 Issue:10 Volume:69 Page:5637-5643
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Liu Lu¹^ORCID,Guo Yang¹,Li Binkang²,Yang Shaohua²,Yan Ming²,Zhou Errui²,Guo Mingan²,Li Gang²

Affiliation:

1. College of Computer, National University of Defense Technology, Changsha, China

2. State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an, China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9901396/09874861.pdf?arnumber=9874861

Reference26 articles.

1. A Sub-0.5 Electron Read Noise VGA Image Sensor in a Standard CMOS Process

2. Charge transfer speed analysis in pinned photodiode CMOS image sensors based on a pulsed storage-gated method;pelamatti;Proc Solid-State Device Research Conf,2015

3. Experimental Analysis of Lag Sources in Pinned Photodiodes

4. no image lag photodiode structure in the interline ccd image sensor;teranishi;1982 International Electron Devices Meeting,1982

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3. The effect of photodiode shape on pinning potential for charge transfer in CMOS image sensors;Microelectronics Journal;2023-01