Simulation Aided Hardening of Power Diodes to Prevent Single Event Burnout
Author:
Affiliation:
1. School of Microelectronics, Xidian University, Xi’an, China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9864631/09834311.pdf?arnumber=9834311
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5. theory of a forward-biased diffused-junction p-l-n rectifier—part i: exact numerical solutions;cheow;IEEE Transactions on Electron Devices,1972
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