Demonstration of β-Ga₂O₃ Superjunction-Equivalent MOSFETs-Reference-Cited by-同舟云学术

Demonstration of β-Ga₂O₃ Superjunction-Equivalent MOSFETs

Published:2022-04 Issue:4 Volume:69 Page:2203-2209
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Yibo¹^ORCID,Gong Hehe²^ORCID,Jia Xiaole³,Ye Jiandong²^ORCID,Liu Yan¹^ORCID,Hu Haodong¹,Ou Xin⁴^ORCID,Ma Xiaohua¹^ORCID,Zhang Rong²,Hao Yue¹,Han Genquan¹^ORCID

Affiliation:

1. School of Microelectronics, Xidian University, Xi’an, China

2. School of Electronic Science and Engineering, Nanjing University, Nanjing, China

3. Zhejiang Laboratory, Research Center for Intelligent Chips, Hangzhou, China

4. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China

Funder

National Natural Science Foundation of China

Frontier Science Key Program of CAS

Zhejiang Provincial Natural Science Foundation

Shanghai Science and Technology Innovation Action Plan Program

Program of Shanghai Academic Research Leader

K. C. Wong Education Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

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