Low-Resistance Ni/Ag Contacts on GaN-Based p-Channel Heterojunction Field-Effect Transistor
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou, China
2. School of Intelligent Manufacturing Ecosystem, Xi’an Jiaotong-Liverpool University, Suzhou, China
Funder
Science and Technology Program of Suzhou
Key Program Special Fund in Xi’an Jiaotong–Liverpool University
XJTLU Research Development Fund
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10004030/09970484.pdf?arnumber=9970484
Reference34 articles.
1. Field-induced Acceptor Ionization in Enhancement-mode GaN p-MOSFETs
2. First Demonstration of a Self-Aligned GaN p-FET
3. Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure*
4. Enhancement-Mode Gate-Recess-Free GaN-Based p-Channel Heterojunction Field-Effect Transistor With Ultra-Low Subthreshold Swing
5. High ${I}_{\text{ON}}$ and ${I}_{\text{ON}}$ /${I}_{\text{OFF}}$ Ratio Enhancement-Mode Buried ${p}$ -Channel GaN MOSFETs on ${p}$ -GaN Gate Power HEMT Platform
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1. GaN-based E-mode p-FETs with polarization-doped p-type graded AlGaN channels;Journal of Physics D: Applied Physics;2024-06-27
2. Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure;Applied Physics Letters;2024-06-10
3. Comparative Analysis of Ni/Ag and Ni/Au Contacts on GaN/AlGaN/GaN Platform;physica status solidi (a);2024-06-07
4. Analyzing E-Mode p-Channel GaN H-FETs Using an Analytic Physics-Based Compact Model;IEEE Transactions on Electron Devices;2024-03
5. A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor Field-Effect Transistor with a Buried Back Gate for Gallium Nitride Single-Chip Complementary Logic Circuits;Electronics;2024-02-10
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