Bi-Directional Long Short-Term Memory Neural Network Modeling of Data Retention Characterization in 3-D Triple-Level Cell NAND Flash Memory-Reference-Cited by-同舟云学术

Bi-Directional Long Short-Term Memory Neural Network Modeling of Data Retention Characterization in 3-D Triple-Level Cell NAND Flash Memory

Published:2022-08 Issue:8 Volume:69 Page:4241-4247
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jang Hyundong¹^ORCID,Park Chanyang¹^ORCID,Nam Kihoon¹^ORCID,Yun Hyeok¹^ORCID,Cho Kyeongrae¹,Yoon Jun-Sik¹^ORCID,Choi Hyun-Chul²^ORCID,Kang Ho-Jung³,Park Min Sang⁴^ORCID,Sim Jaesung³,Baek Rock-Hyun¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South Korea

2. Department of Electrical Engineering, Yeungnam University, Gyeongsan, South Korea

3. SK hynix Inc., Cheongju, South Korea

4. SK hynix Inc., Icheon, South Korea

Funder

National Research Foundation of Korea (NRF) Grant through the Korean Government [Ministry of Science and ICT (MSIT)]

Semiconductor Industry Collaborative Project Between Pohang University of Science and Technology (POSTECH) and SK hynix Inc

BK21 Fostering Outstanding Universities for Research (FOUR) Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9839401/09798859.pdf?arnumber=9798859

Reference30 articles.

1. Analysis of Failure Mechanisms During the Long-Term Retention Operation in 3-D NAND Flash Memories

2. Effects of Lateral Charge Spreading on the Reliability of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash Memory

3. Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices

4. Effect of Lateral Charge Diffusion on Retention Characteristics of 3D NAND Flash Cells

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