Neural Network-Based prediction for Cross-Temperature induced VT distribution shift in 3D NAND flash memory
Author:
Funder
Pohang University of Science and Technology
SK Hynix
Ministry of Trade, Industry and Energy
Publisher
Elsevier BV
Reference18 articles.
1. Kim H, Ahn S-J, Shin YG, Lee K, Jung E. Evolution of NAND flash memory: From 2D to 3D as a storage market leader. In: IEEE International Memory Workshop; 2017. pp. 1-4. https://doi.org/10.1109/IMW.2017.7939081.
2. Righetti N, Puzzilli G. 2D vs 3D NAND technology: Reliability benchmark. In: IEEE International Integrated Reliability Workshop; 2017. pp. 1-6. https://doi.org/10.1109/IIRW.2017.8361235.
3. 256 Gb 3 b/Cell V-nand flash memory with 48 stacked WL layers;Kang;IEEE J Solid-State Circuits,2017
4. Highly-reliable cell characteristics with 128-layer single-stack 3D-NAND flash memory;Park;In: Symposium on VLSI Technology,2021
5. 3D NAND technology achievements and future scaling perspectives;Goda;IEEE Trans Electron Devices,2020
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