Monolithic Waveguide-Integrated Group IV Multiple-Quantum-Well Photodetectors on 300 mm Si Substrates
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore
2. Applied Materials Inc., Sunnyvale, CA, USA
Funder
National Research Foundation Singapore through the Quantum Engineering Program
Ministry of Education Tier 2
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9741401/09704866.pdf?arnumber=9704866
Reference26 articles.
1. Monolithic silicon-photonic platforms in state-of-the-art CMOS SOI processes [Invited]
2. An integrated silicon photonic chip platform for continuous-variable quantum key distribution
3. First Demonstration of Monolithic Waveguide-Integrated Group IV Multiple-Quantum-Well Photodetectors on 300 mm Si Substrate for $2\ \mu \mathrm{m}$ Optoelectronic Integrated Circuits
4. High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate
5. Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation
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1. Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection;Applied Surface Science;2024-05
2. Recent Advances in Si-Compatible Nanostructured Photodetectors;Technologies;2023-01-24
3. Lattice matched GeSn/InAlAs heterostructure: role of Sn in energy band alignment, atomic layer diffusion and photoluminescence;Journal of Materials Chemistry C;2023
4. Sputtering-Grown Intrinsic Gesn/Ge Multiple Quantum Wells on N-Ge for Low-Cost Visible/Shortwave Infrared Dual-Band Photodetection;2023
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