Gate Stress Polarity Dependence of AC Bias Temperature Instability in Silicon Carbide MOSFETs-Reference-Cited by-同舟云学术

Gate Stress Polarity Dependence of AC Bias Temperature Instability in Silicon Carbide MOSFETs

Published:2022-06 Issue:6 Volume:69 Page:3328-3333
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhong Xiaohan¹^ORCID,Jiang Huaping¹^ORCID,Tang Lei¹,Qi Xiaowei¹,Jiang Peng¹,Ran Li²^ORCID

Affiliation:

1. State Key Laboratory of Power Transmission Equipment and System Safety and New Technology, Chongqing University, Chongqing, China

2. School of Engineering, The University of Warwick, Coventry, U.K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9780469/09758160.pdf?arnumber=9758160

Reference19 articles.

1. Avalanche rugged 1200 V 80 m? SiC MOSFETs with state-of-the-art threshold voltage stability;domeij;Proc IEEE 6th Workshop Wide Bandgap Power Devices Appl (WiPDA),2018

2. Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability

3. Threshold voltage hysteresis in SiC MOSFETs and its impact on circuit operation

4. Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs

5. SiC MOSFET threshold-stability issues

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