Optimization of NiO/β-Ga2O3 Heterojunction Diodes for High-Power Application-Reference-Cited by-同舟云学术

Optimization of NiO/β-Ga₂O₃ Heterojunction Diodes for High-Power Application

Published:2022-10 Issue:10 Volume:69 Page:5722-5727
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Liao Chao¹^ORCID,Lu Xing¹^ORCID,Xu Tongling¹^ORCID,Fang Paiwen¹^ORCID,Deng Yuxin¹,Luo Haoxun¹^ORCID,Wu Zhisheng¹,Chen Zimin¹^ORCID,Liang Jun²,Pei Yanli¹^ORCID,Wang Gang¹

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China

2. Shenzhen Graduated School, Peking University, Shenzhen, China

Funder

Science and Technology Project of Guangdong Province, China

Shenzhen Science and Technology Innovation Committee Project

Basic and Applied Basic Research Foundation of Guangdong Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9901396/09873894.pdf?arnumber=9873894

Reference26 articles.