Analysis of Abnormal Current Rise Mechanism in GaN-MIS HEMT With Al<sub>2</sub>O<sub>3</sub>/Si<sub>3</sub>N<sub>4</sub> Gate Insulator Under Hot Switching-Reference-Cited by-同舟云学术

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Analysis of Abnormal Current Rise Mechanism in GaN-MIS HEMT With Al₂O₃/Si₃N₄ Gate Insulator Under Hot Switching

Published:2022-08 Issue:8 Volume:69 Page:4218-4223
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wu Pei-Yu¹,Tsai Xin-Ying¹,Chang Ting-Chang²^ORCID,Yeh Yu-Hsuan³,Huang Wei-Chen³,Chang Kai-Chun³,Tsai Tsung-Ming¹^ORCID,Huang Jen-Wei⁴

Affiliation:

1. Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung, Taiwan

2. Department of Physics and the Center of Crystal Research, National Sun Yat-sen University, Kaohsiung, Taiwan

3. Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan

4. Department of Physics, R.O.C. Military Academy, Kaohsiung, Taiwan

Funder

Ministry of Science and Technology (MOST) Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9839401/09813737.pdf?arnumber=9813737

Reference30 articles.

1. Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate

2. An empirical model for device degradation due to hot-carrier injection

3. Breakdown Enhancement and Current Collapse Suppression in AlGaN/GaN HEMT by NiOX/SiNX and Al2O3/SiNX as Gate Dielectric Layer and Passivation Layer

4. A full GaN-Integrated Sawtooth Generator based on Enhancement-mode AlGaN/GaN MIS-HEMT for GaN Power Converters

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High On/Off Current Ratio and High V _th/R _on Stability GaN MIS-HEMTs With GaN/AlN Superlattices Barrier;IEEE Transactions on Electron Devices;2024-05

2. Analysis of the Extraction Method and Mechanism of Hot Carrier Degradation in Al₂O₃/Si₃N₄ Bilayer Gate Dielectric AlGaN/GaN MIS-HEMTs;IEEE Transactions on Device and Materials Reliability;2023-12

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