Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation-Reference-Cited by-同舟云学术

Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation

Published:2022-07 Issue:7 Volume:69 Page:3694-3699
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Fontanini R.¹^ORCID,Segatto M.¹^ORCID,Nair K. S.²,Holzer M.²,Driussi F.¹^ORCID,Hausler I.³,Koch C. T.³^ORCID,Dubourdieu C.²,Deshpande V.²,Esseni D.¹^ORCID

Affiliation:

1. Polytechnic Department of Engineering and Architecture (DPIA), University of Udine, Udine, Italy

2. IFOX, Helmholtz-Zentrum Berlin, Berlin, Germany

3. Institut für Physik, Humboldt-Universität zu Berlin, Berlin, Germany

Funder

European Union through the BeFerroSynaptic Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9802454/09781803.pdf?arnumber=9781803

Reference30 articles.

1. The Quantum Metal Ferroelectric Field-Effect Transistor

2. Stabilization of negative capacitance in ferroelectric capacitors with and without a metal interlayer

3. Modelling and design of FTJs as high reading-impedance synaptic devices

4. Modeling and Design of FTJs as Multi-Level Low Energy Memristors for Neuromorphic Computing

5. Experimental study on polarization-limited operation speed of negative capacitance FET with ferroelectric HfO2;kobayashi;IEDM Tech Dig,2016

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Promote Hf_0.5Zr_0.5O₂ FTJs ON/OFF by Thermal Rewake-Up Operation for Neuromorphic Computing;IEEE Electron Device Letters;2024-01

2. On the Thickness Scaling of Ferroelectric Hafnia;IEEE Transactions on Materials for Electron Devices;2024

3. A Compact Model of FTJ Covering the Trapping/De-trapping Charateristics;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27

4. Modelling and Simulations of Ferroelectric Materials and Ferroelectric-Based Nanoelectronic Devices : (Invited Paper);2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27

5. Analytical Procedure for the Extraction of Material Parameters in Antiferroelectric ZrO₂;IEEE Transactions on Electron Devices;2023-06