Investigation of Ohmic Contact Resistance, Surface Resistance, and Channel Resistance for Hydrogen-Terminated Diamond MOSFETs-Reference-Cited by-同舟云学术

Investigation of Ohmic Contact Resistance, Surface Resistance, and Channel Resistance for Hydrogen-Terminated Diamond MOSFETs

Author:

Liu Jiangwei¹^ORCID,Ohsato Hirotaka²,Da Bo³,Koide Yasuo¹

Affiliation:

1. Research Center for Functional Materials, National Institute for Materials Science (NIMS), Ibaraki, Japan

2. Nanofabrication Platform, NIMS, Ibaraki, Japan

3. Research and Services Division of Materials Data and Integrated System, NIMS, Ibaraki, Japan

Funder

Leading Initiative for Excellent Young Researchers ProgramProject, theMinistry of Education, Culture, Sports, and Technology (MEXT), Japan

KAKENHI Projects

MEXT, Japan

Nanotechnology Platform Program, MEXT, Japan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

Reference28 articles.

4. Diamond field-effect transistors with 1.3 A/mm drain current density by Al2O3 passivation layer;hirama;Jpn J Appl Phys,2012

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