High-Yield and Uniform NbO<sub> <i>x</i> </sub>-Based Threshold Switching Devices for Neuron Applications-Reference-Cited by-同舟云学术

High-Yield and Uniform NbO_x-Based Threshold Switching Devices for Neuron Applications

Published:2022-05 Issue:5 Volume:69 Page:2391-2397
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen Pei¹^ORCID,Zhang Xumeng²^ORCID,Wu Zuheng³^ORCID,Wang Yongzhou³^ORCID,Zhu Jiaxue³,Hao Yunxia³,Feng Guan³,Sun Yize¹,Shi Tuo³,Wang Ming²,Liu Qi³^ORCID

Affiliation:

1. School of Microelectronics, University of Science and Technology of China (USTC), Hefei, China

2. Frontier Institute of Chip and System, Fudan University, Shanghai, China

3. Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

Funder

National Key Research and Development Program

National Natural Science Foundation of China

Major Science and Technology Special Project of China

China Postdoctoral Science Foundation

Strategic Priority Research Program of the Chinese Academy of Sciences

Project of MOE Innovation Platform

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9761777/09745266.pdf?arnumber=9745266

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4. Ultrathin (<10 nm) Nb2O5/NbO2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications;kim;Proc Symp VLSI Technol (VLSIT),2012

5. Various Threshold Switching Devices for Integrate and Fire Neuron Applications

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