Various Threshold Switching Devices for Integrate and Fire Neuron Applications-Reference-Cited by-同舟云学术

Various Threshold Switching Devices for Integrate and Fire Neuron Applications

Published:2019-02-25 Issue:9 Volume:5 Page:1800866
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Lee Donguk¹,Kwak Myonghoon¹,Moon Kibong¹,Choi Wooseok¹,Park Jaehyuk¹,Yoo Jongmyung¹,Song Jeonghwan¹,Lim Seokjae¹,Sung Changhyuck¹,Banerjee Writam¹,Hwang Hyunsang¹^ORCID

Affiliation:

1. Center for Single Atom‐based Semiconductor Device, and Department of Material Science and EngineeringPohang University of Science and Technology (POSTECH) Pohang 790‐784 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800866

Reference30 articles.

1. Neuromorphic electronic systems

Cited by 118 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spiking Neural Network Integrated with Impact Ionization Field‐Effect Transistor Neuron and a Ferroelectric Field‐Effect Transistor Synapse;Advanced Materials;2024-09-05

2. Low-energy and tunable LIF neuron using SiGe bandgap-engineered resistive switching transistor;Discover Nano;2024-08-23

3. HfO2-based resistive random access memory with an ultrahigh switching ratio;Journal of Applied Physics;2024-08-15

4. Novel Two-Terminal Synapse/Neuron Based on an Antiferroelectric Hafnium Zirconium Oxide Device for Neuromorphic Computing;Nano Letters;2024-08-15

5. Perspective: Entropy-stabilized oxide memristors;Applied Physics Letters;2024-08-12