Compact and Fast Response Dual-Directional SCR for Nanoscale ESD Protection Engineering-Reference-Cited by-同舟云学术

Compact and Fast Response Dual-Directional SCR for Nanoscale ESD Protection Engineering

Published:2022-06 Issue:6 Volume:69 Page:3490-3493
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Du Feibo¹^ORCID,Chang Kuan-Chang¹^ORCID,Lin Xinnan¹,Hou Fei²^ORCID,Zhang Yuxin³,Han Aoran³,Luo Xun³^ORCID,Liu Zhiwei³^ORCID

Affiliation:

1. Shenzhen Key Laboratory of Advanced Electron Device and Integration, School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, China

2. School of Electronic Information and Electrical Engineering, Chengdu University, Chengdu, China

3. Center for Advanced Semiconductor and Integrated Micro-System, University of Electronic Science and Technology of China, Chengdu, China

Funder

Nature Science Foundation of China

Central Universities Fundamental Research Project

Shenzhen Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9780469/09754983.pdf?arnumber=9754983

Reference15 articles.

1. FinFET SCR structure optimization for high-speed serial links ESD protection

2. Compact and Low Leakage Devices for Bidirectional Low-Voltage ESD Protection Applications

3. Process and design optimization of a protection scheme based on NMOSFETs with ESD implant in 65 nm and 45 nm CMOS technologies;chatty;Proc Electrical Overstress/Electrostatic Discharge (EOS/ESD) Symp,2007

4. Improving ESD Robustness of pMOS Device With Embedded SCR in 28-nm High- $k$ /Metal Gate CMOS Process

5. Characterization of high-k/metal gate stack breakdown in the time scale of ESD events;yang;Proc IEEE Int Rel Phys Symp,2020

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