All-Directional Silicon-Controlled Rectifier With Improved Voltage Clamping Capability for FinFET ESD Protection-Reference-Cited by-同舟云学术

All-Directional Silicon-Controlled Rectifier With Improved Voltage Clamping Capability for FinFET ESD Protection

Published:2024-03 Issue:3 Volume:71 Page:2247-2252
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Du Feibo¹^ORCID,Xie Tiantian¹,Zhu Zhihua²,Wang Songyan²,Hou Fei³^ORCID,Chen Ruibo⁴^ORCID,Han Aoran¹,Gao Dongxing⁵,Liu Yi¹^ORCID,Liu Jizhi¹^ORCID,Luo Xun¹^ORCID,Liu Zhiwei¹^ORCID

Affiliation:

1. Center for Advanced Semiconductor and Integrated Micro-System, University of Electronic Science and Technology of China, Chengdu, China

2. School of Information Engineering, Zhengzhou University, Zhengzhou, China

3. School of Electronic Information and Electrical Engineering, Chengdu University, Chengdu, China

4. School of Microelectronics, Xidian University, Xi’an, China

5. Shenzhen Jingyang Electronics Company Ltd., Shenzhen, China

Funder

Nature Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10457976/10438902.pdf?arnumber=10438902

Reference13 articles.

1. Comprehensive Study of ESD Design Window Scaling Down to 7nm Technology Node

2. Whole-chip ESD protection design with efficient VDD-to-VSS ESD clamp circuits for submicron CMOS VLSI

3. Design and Optimization of Diode Triggered Silicon Controlled Rectifier in FinFET Technology

4. Design of Fin-Diode-Triggered Rotated Silicon-Controlled Rectifier for High- Speed Digital Application in 16-nm FinFET Process

5. Silicon-Controlled Rectifier for Electrostatic Discharge Protection Solutions With Minimal Snapback and Reduced Overshoot Voltage