A Wide Spectral Response Single Photon Avalanche Diode for Backside-Illumination in 55-nm CMOS Process
Author:
Affiliation:
1. Shaanxi Key Laboratory of Integrated Circuits and Systems, School of Microelectronics, Xidian University, Xi’an, China
Funder
National Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9864631/09851621.pdf?arnumber=9851621
Reference29 articles.
1. A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technology
2. Scaleable Single-Photon Avalanche Diode Structures in Nanometer CMOS Technology
3. A New Single Photon Avalanche Diode in CMOS High-Voltage Technology
4. A new single-photon avalanche diode in 90nm standard CMOS technology
5. A Substrate Isolated CMOS SPAD Enabling Wide Spectral Response and Low Electrical Crosstalk
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