A New Single Photon Avalanche Diode in CMOS High-Voltage Technology
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4300055/4300056/04300396.pdf?arnumber=4300396
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A Wide Spectral Response Single Photon Avalanche Diode for Backside-Illumination in 55-nm CMOS Process;IEEE Transactions on Electron Devices;2022-09
2. Parametric Study of p-n Junctions and Structures for CMOS-Integrated Single-Photon Avalanche Diodes;IEEE Sensors Journal;2018-07-01
3. SPAD Figures of Merit for Photon-Counting, Photon-Timing, and Imaging Applications: A Review;IEEE Sensors Journal;2016-01
4. CMOS SPAD Based on Photo-Carrier Diffusion Achieving PDP >40% From 440 to 580 nm at 4 V Excess Bias;IEEE Photonics Technology Letters;2015-12-01
5. A Substrate Isolated CMOS SPAD Enabling Wide Spectral Response and Low Electrical Crosstalk;IEEE Journal of Selected Topics in Quantum Electronics;2014-11
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