Demonstration of a 10-kV Class Waffle-Substrate n-Channel IGBT in 4H-SiC-Reference-Cited by-同舟云学术

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Demonstration of a 10-kV Class Waffle-Substrate n-Channel IGBT in 4H-SiC

Published:2022-10 Issue:10 Volume:69 Page:5683-5688
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Alam Monzurul¹^ORCID,Opondo Noah²^ORCID,Morisette Dallas T.²^ORCID,Cooper James A.³^ORCID

Affiliation:

1. Electrical and Computer Engineering Department, North Carolina Agricultural and Technical State University, Greensboro, NC, USA

2. School of Electrical and Computer Engineering and the Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA

3. Sonrisa Research Inc., Santa Fe, NM, USA

Funder

Army Research Laboratory under Cooperative Agreement

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9901396/09877888.pdf?arnumber=9877888

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nitrogen doping concentration dependence of nitrogen incorporation kinetics during physical vapor transport growth of 4H–SiC crystals;Materials Science in Semiconductor Processing;2024-06

2. The optimisation, fabrication and comparison of 10 kV-rated 4H-SiC IGBTs and MOSFETs;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

3. Experimental and simulation studies of surface segregation-limited nitrogen incorporation at the growth front of physical vapor transport-grown 4H-SiC crystals;Journal of Applied Physics;2023-07-26

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