Design Insights Into Switching Performance of Germanium Source L-Shaped Gate Dopingless TFET Based on Cladding Layer Concept
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, Semnan University, Semnan, Iran
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10025571/09997239.pdf?arnumber=9997239
Reference35 articles.
1. Switching Performance Enhancement in Nanotube Double-Gate Tunneling Field-Effect Transistor With Germanium Source Regions
2. Controlling the Drain Side Tunneling Width to Reduce Ambipolar Current in Tunnel FETs Using Heterodielectric BOX
3. Gate Drain Underlapping: A Performance Enhancer For HD-GAA-TFET
4. Impact of Quantum Confinement on Band-to-Band Tunneling of Line-Tunneling Type L-Shaped Tunnel Field-Effect Transistor
5. Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current
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3. Switching and photosensitive analysis of dopingless tunnel field effect transistor based on cladding layer concept;Micro and Nanostructures;2023-12
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