Highly Sensitive Pressure Sensor Based on h-BN/Graphene/h-BN Heterojunction and Cu–Sn Solid–Liquid Interdiffusion Bonding-Reference-Cited by-同舟云学术

Highly Sensitive Pressure Sensor Based on h-BN/Graphene/h-BN Heterojunction and Cu–Sn Solid–Liquid Interdiffusion Bonding

Published:2022-08 Issue:8 Volume:69 Page:4521-4526
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Junqiang¹^ORCID,Xie Changzheng¹^ORCID,Li Mengwei¹^ORCID,Bai Jingyu¹^ORCID

Affiliation:

1. National Key Laboratory of Instrumentation Science and Dynamic Measurement, North University of China, Taiyuan, China

Funder

National Natural Science Foundation of China

“173” Projects of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9839401/09791108.pdf?arnumber=9791108

Reference46 articles.

1. Raman Spectrum of Graphene and Graphene Layers

2. Solid–Liquid Interdiffusion Bonding of Cu–Sn–Cu Interconnection and Sealing for High-Temperature Pressure Sensor Based on Graphene

3. Substrate-induced band gap in graphene on hexagonal boron nitride: Ab initio density functional calculations;giovannetti;Phys Rev B Condens Matter,2007

4. All CVD Boron Nitride Encapsulated Graphene FETs With CMOS Compatible Metal Edge Contacts

5. BN/Graphene/BN Transistors for RF Applications

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