Simulation Study of Single-Event Effects for the 4H-SiC VDMOSFET With Ultralow On-Resistance
Author:
Affiliation:
1. School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China
2. National Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment, Harbin Institute of Technology, Harbin, China
Funder
National Research and Development Program for Major Research Instruments of China
National Natural Science Foundation of China
Zhejiang Provincial Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9780469/09766021.pdf?arnumber=9766021
Reference34 articles.
1. Simulation Study on Single-Event Burnout in Rated 1.2-kV 4H-SiC Super-Junction VDMOS
2. Simulation Study of Single-Event Burnout in 1.5-kV 4H-SiC JTE Termination
3. An Optimized Structure of 4H-SiC U-Shaped Trench Gate MOSFET
4. Determination of the thermal diffusivity and conductivity of monocrystalline silicon carbide (300-2300 K)
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4. A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET;Micromachines;2023-12-23
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