Extended Scale Length Theory for Low-Dimensional Field-Effect Transistors-Reference-Cited by-同舟云学术

Extended Scale Length Theory for Low-Dimensional Field-Effect Transistors

Published:2022-09 Issue:9 Volume:69 Page:5302-5309
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Gilardi Carlo¹^ORCID,Bennett Robert K. A.¹^ORCID,Yoon Youngki²^ORCID,Pop Eric¹^ORCID,Wong H.-S. Philip¹^ORCID,Mitra Subhasish³^ORCID

Affiliation:

1. Department of Electrical Engineering, Stanford University, Stanford, CA, USA

2. Waterloo Institute for Nanotechnology (WIN), Waterloo, Canada

3. Department of Electrical Engineering and the Department of Computer Science, Stanford University, Stanford, CA, USA

Funder

Defense Advanced Research Projects Agency (DARPA) Three-Dimensional Monolithic System-on-a-Chip

Microelectronics Co-Design Research Program at the US Department of Energy

National Science Foundation

Stanford SystemX Alliance

Stanford Graduate Fellowship

Natural Sciences and Engineering Research Council of Canada, Postgraduate Scholarships–Doctoral (NSERC PGS–D)Programs

Applications and Systems driven Center for Energy-Efficient Integrated NanoTechnologies (ASCENT), one of six centers in Joint University Microelectronics Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/16/9864631/9834307-aam.pdf

Reference41 articles.

1. 2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope

2. Comprehensive Analysis of Short-Channel Effects in Ultrathin SOI MOSFETs

3. A Short-Channel $I$ – $V$ Model for 2-D MOSFETs

4. A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations

5. Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs

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