Design Considerations for 2-D Dirac-Source FETs—Part II: Nonidealities and Benchmarking
Author:
Affiliation:
1. Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA
Funder
Intel Corporation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9839401/09797306.pdf?arnumber=9797306
Reference21 articles.
1. Infrared spectroscopy of electronic bands in bilayer graphene
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3. Design and Simulation of Steep-Slope Silicon Cold Source FETs With Effective Carrier Distribution Model
4. Hot-Carrier Cooling in High-Quality Graphene Is Intrinsically Limited by Optical Phonons
5. Mapping the Density of Scattering Centers Limiting the Electron Mean Free Path in Graphene
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