300 μm Deep through silicon via in laser-ablated CMOS multi-project wafer for cost-effective development of integrated MEMS-Reference-Cited by-同舟云学术

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300 μm Deep through silicon via in laser-ablated CMOS multi-project wafer for cost-effective development of integrated MEMS

Published:2017-01 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE 30th International Conference on Micro Electro Mechanical Systems (MEMS)
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Author:

Suzuki Yukio,Fukushi Hideyuki,Muroyama Masanori,Hata Yoshiyuki,Nakayama Takahiro,Chand Rakesh,Hirano Hideki,Nonomura Yutaka,Funabashi Hirofumi,Tanaka Shuji

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7852393/7863316/07863515.pdf?arnumber=7863515

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Highly Processable wTSV Modular Manufacturing for Next Generation 3D MEMS/NEMS Integrated System;2022 China Semiconductor Technology International Conference (CSTIC);2022-06-20

3. Membrane-Heater-Integrated LSI for On-Site Annealing-Recovery from 20 KGY Gamma Ray Irradiation Damage;2021 IEEE 34th International Conference on Micro Electro Mechanical Systems (MEMS);2021-01-25

4. Development of silicon wafer packaging technology for deep UV LED;Electrical Engineering in Japan;2020-12

5. Development of Silicon Wafer Packaging Technology for Deep UV LED;IEEJ Transactions on Sensors and Micromachines;2020-07-01

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