Degradation of MNOS Memory Transistor Characteristics and Failure Mechanism Model-Reference-Cited by-同舟云学术

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Degradation of MNOS Memory Transistor Characteristics and Failure Mechanism Model

Published:1972-04 Issue: Volume: Page:
ISSN:0735-0791
Container-title:10th Reliability Physics Symposium
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Author:

Woods Murray H.,Tuska James W.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4207890/4207891/04207911.pdf?arnumber=4207911

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Charge retention of scaled SONOS nonvolatile memory devices at elevated temperatures;Solid-State Electronics;2000-06

2. Silicon Nitride as Mask and Dielectric in Field Effect Devices;Si Silicon;1991

3. Endurance and retention of mnos devices over the temperature range from −50°c to +125°c;Journal of Electronic Materials;1981-11

4. Influence of a high-temperature hydrogen anneal on the memory characteristics of p-channel MNOS transistors;Journal of Applied Physics;1980

5. Fet Technologies and Applications;Semiconducting Devices;1976

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