Optimal Conditions for Micromachining $\hbox{Si}_{1 - { \rm x}}\hbox{Ge}_{\rm x}$ at 210 $^{\circ}\hbox{C}$-Reference-Cited by-同舟云学术

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Optimal Conditions for Micromachining $\hbox{Si}_{1 - { \rm x}}\hbox{Ge}_{\rm x}$ at 210 $^{\circ}\hbox{C}$

Published:2007-06 Issue:3 Volume:16 Page:581-588
ISSN:1057-7157
Container-title:Journal of Microelectromechanical Systems
language:
Short-container-title:J. Microelectromech. Syst.

Author:

Sedky Sherif,Bayoumy Ahmed,Alaa Ahmed,Nagy Ahmed,Witvrouw Ann

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Mechanical Engineering

Link

http://xplorestaging.ieee.org/ielx5/84/4276790/04276819.pdf?arnumber=4276819

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2. Materials Aspects of Micro- and Nanoelectromechanical Systems;Springer Handbook of Nanotechnology;2017

3. Fabrication process of a microstructures based on hydrogenated amorphous SiGe films for applications in MEMS devices;Journal of Mechanical Science and Technology;2015-04

4. Silicon Germanium as a Novel Mask for Silicon Deep Reactive Ion Etching;Journal of Microelectromechanical Systems;2013-10

5. SiGe MEMS at processing temperatures below 250°C;Sensors and Actuators A: Physical;2012-12

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