High Speed Transient Thermal Simulation of GaN HEMT Devices-Reference-Cited by-同舟云学术

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High Speed Transient Thermal Simulation of GaN HEMT Devices

Published:2022-08-10 Issue: Volume: Page:
ISSN:
Container-title:2022 23rd International Conference on Electronic Packaging Technology (ICEPT)
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Author:

Wang Jian¹,Wang Ruoda²,He Zhiyuan³,Yang Chao¹,Fu Zhiwei⁴,Yang Jia-Yue⁵

Affiliation:

1. Shandong University Science and Technology on Reliability Physics and Application of Electronic Component Laboratory,School of Energy and Power Engineering,Jinan,China

2. China Center for Information Industry Development,Beijing,China

3. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory,Guangzhou,China

4. Shandong University Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI,School of Energy and Power Engineering,Guangzhou,China

5. Shandong University,School of Energy and Power Engineering, Shandong University Optics & Thermal Radiation Research Center, Institute of Frontier and Interdisciplinary Science,Jinan,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9872527/9872536/09873288.pdf?arnumber=9873288

Reference14 articles.

1. A Numerical Study on Comparing the Active and Passive Cooling of AlGaN/GaN HEMTs

2. Impact of Intrinsic Stress in Diamond Capping Layers on the Electrical Behavior of AlGaN/GaN HEMTs

3. The application of transient thermal analysis in solder joint thermal fatigue life analysis

4. Fast and Distributed Thermal Model for Thermal Modeling of GaN Power Devices

5. Lumped element thermal modeling of GaN-Based HEMTs

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