Study on the low-void-ratio vacuum eutectic technology for the Al<sub>2</sub>O<sub>3</sub> ceramic circuit substrate-Reference-Cited by-同舟云学术

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Study on the low-void-ratio vacuum eutectic technology for the Al₂O₃ ceramic circuit substrate

Published:2022-08-10 Issue: Volume: Page:
ISSN:
Container-title:2022 23rd International Conference on Electronic Packaging Technology (ICEPT)
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Author:

Zhang Ping¹,Ren Yixuan¹,Luo Wenbo²,Wei Meng¹,Hu Guangtao¹,Zhu Jun²,Liu Ziyan¹,Yang Ningning¹,Han Lichang¹,Li Jie¹,Liu Guowei¹,Zanjiao ¹

Affiliation:

1. Sichuan Aerospace Liaoyuan Science and Technology Co., LTD,Microsystem Division,Chengdu,P. R. China

2. University of Electronic Science and Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,P. R. China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9872527/9872536/09873320.pdf?arnumber=9873320

Reference11 articles.

1. High vacuum wafer level packaging for high-value MEMS applications

2. The no-load vacuum eutectic solder die bonding process

3. Interfacial Reliability between Gold-Germanium solder and Au/Ni-metallized Kovar

4. GaN-based E-band power amplifier modules

5. Hedrick E. Gender and Boyle's law of gases;Isis,2003

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