GaN-based E-band power amplifier modules
Author:
Affiliation:
1. Fraunhofer Institute for Applied Solid-State Physics, Freiburg, Germany
2. Radiometer Physics GmbH, Meckenheim, Germany
3. Institute of Robust Power Semiconductor Systems, University of Stuttgart, Stuttgart, Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7805383/7824247/07824405.pdf?arnumber=7824405
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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