Review of Power Cycling Reliability of GaN HEMTs-Reference-Cited by-同舟云学术

Review of Power Cycling Reliability of GaN HEMTs

Published:2022-08-10 Issue: Volume: Page:
ISSN:
Container-title:2022 23rd International Conference on Electronic Packaging Technology (ICEPT)
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Author:

Wang Zhizhe¹,Wang Bin²,Deng Chuanjin²,Deng Rui²,Chen Si³,Ren Yan¹,Ma Chi¹

Affiliation:

1. China Electronic Product Reliability and Environmental Testing Research Institute,Components and Materials Research Department,Guangzhou,China

2. China Electronic Product Reliability and Environmental Testing Research Institute,Electronic Component Inspection and Testing Center,Guangzhou,China

3. China Electronic Product Reliability and Environmental Testing Research Institute,Science and Technology on Reliability Physics and Application of Electronic Component Laboratory,Guangzhou,China

Funder

Research and Development

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9872527/9872536/09873152.pdf?arnumber=9873152

Reference18 articles.

1. Thermal resistance measurement of GaN HEMT based on thermal imaging;sun;Electronic Components Information,2022

2. Reliability of GaN GIT Devices in Power Cycling Tests with RDS(on)(T) and VGS(T) for Junction Temperature Calculation;boldyrjew-mast;PCIM Europe digital days 2020 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management,2020

3. Advanced temperature estimation in low Rds,on p-GaN HEMT devices for performing power cycling tests;franke;PCIM Europe 2019 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management,2019

4. Performance Degradation of GaN HEMTs Under Accelerated Power Cycling Tests

5. Reliability and reliability investigation of wide-bandgap power devices;josef;Microelectron Reliab,2018

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