Multiphysics Coupling Analysis and Structural Optimization of High Density TSVs in Microsystems
Author:
Affiliation:
1. Beijing Microelectronics Technology Institute,Microsysterm depatment,Beijing,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9872527/9872536/09873191.pdf?arnumber=9873191
Reference8 articles.
1. Electrical characterization of trough silicon via (TSV) depending on structural and material parameters based on 3D full wave simulation[C];pak;2007 International Conference on Electronic Materials and Packaging,2007
2. Numerical modeling of through silicon via (TSV) stacked module with micro bump interconnect for biomedical device
3. Three-dimensional simulation of the effects of Cu protrusion of Cu-filled TSVs on thermal fatigue behavior of micro-bump joints in 3D integration
4. Three-Dimensional Simulation of Effects of Microstructure Evolution and Interfacial Delamination on Cu Protrusion in Copper Filled Through Silicon Vias by Combined Monte Carlo and Finite Element Methods
5. Modeling Stress in Silicon With TSVs and Its Effect on Mobility
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