A Transient Analysis Method to Characterize the Trap Vertical Location in Nitride-Trapping Devices-Reference-Cited by-同舟云学术

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A Transient Analysis Method to Characterize the Trap Vertical Location in Nitride-Trapping Devices

Published:2004-12 Issue:12 Volume:25 Page:816-818
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:en
Short-container-title:IEEE Electron Device Lett.

Author:

Lue H.-T.,Shih Y.-H.,Hsieh K.-Y.,Liu R.,Lu C.Y.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/29861/01362785.pdf?arnumber=1362785

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