Low-Temperature Power Device: A New Poly-Si High-Voltage LDMOS With Excimer Laser Crystallization-Reference-Cited by-同舟云学术

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Low-Temperature Power Device: A New Poly-Si High-Voltage LDMOS With Excimer Laser Crystallization

Published:2004-08 Issue:8 Volume:25 Page:547-549
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:en
Short-container-title:IEEE Electron Device Lett.

Author:

Chang F.-L.,Lin M.-J.,Liaw C.W.,Cheng H.-C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/29195/01317021.pdf?arnumber=1317021

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New Super-Junction LDMOS Based on Poly-Si Thin-Film Transistors;IEEE Journal of the Electron Devices Society;2016-11

2. Novel Poly-Si SJ-LDMOS for System-on-Panel Applications;IEEE Transactions on Electron Devices;2016-06

3. A Novel Hybrid Poly-Si Nanowire LDMOS With Extended Drift;IEEE Electron Device Letters;2014-03

4. Design and Analysis of Power Low-Temperature Polysilicon Lateral Double-Diffusion Metal Oxide Semiconductor Field Effect Transistors with Shielding-Trench Structure;Japanese Journal of Applied Physics;2013-08-01

5. Floating electrode transistor based on purified semiconducting carbon nanotubes for high source–drain voltage operation;Nanotechnology;2012-02-01

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