A Novel Hybrid Poly-Si Nanowire LDMOS With Extended Drift-Reference-Cited by-同舟云学术

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A Novel Hybrid Poly-Si Nanowire LDMOS With Extended Drift

Published:2014-03 Issue:3 Volume:35 Page:366-368
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tsai Jhen-Yu,Hu Hsin-Hui,Wu Yung-Chun,Jhan Yi-Rue,Chen Kun-Ming,Huang Guo-Wei

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6746036/06720155.pdf?arnumber=6720155

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hot-Carrier-Induced Reliability for Lateral DMOS Transistors With Split-STI Structures;IEEE Journal of the Electron Devices Society;2021

2. On-Resistance Improvement Impacted by Trapping Effects in Fin-LDMOS Technology;2019 China Semiconductor Technology International Conference (CSTIC);2019-03

3. Investigation on LDMOS Characteristics of Layout Dependence in FinFET Technology;2019 China Semiconductor Technology International Conference (CSTIC);2019-03

4. A Novel Lateral DMOS Transistor With H-Shape Shallow-Trench-Isolation Structure;IEEE Transactions on Electron Devices;2018-11

5. Analog and RF Characteristics of Power FinFET Transistors With Different Drain-Extension Designs;IEEE Transactions on Electron Devices;2018-10

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