Evidence and Understanding of ALD<tex>$hbox HfO_2hbox --hbox Al_2hbox O_3$</tex>Laminate MIM Capacitors Outperforming Sandwich Counterparts-Reference-Cited by-同舟云学术

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Evidence and Understanding of ALD<tex>$hbox HfO_2hbox --hbox Al_2hbox O_3$</tex>Laminate MIM Capacitors Outperforming Sandwich Counterparts

Published:2004-10 Issue:10 Volume:25 Page:681-683
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:en
Short-container-title:IEEE Electron Device Lett.

Author:

Ding S.-J.,Hu H.,Zhu C.,Li M.F.,Kim S.J.,Cho B.J.,Chan D.S.H.,Yu M.B.,Du A.Y.,Chin A.,Kwong D.-L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/29488/01336970.pdf?arnumber=1336970

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2. Sublayer thickness dependence of nanolaminated HfO₂–Al₂O₃ films for ferroelectric phase stabilization;Applied Physics Letters;2022-05-30

3. Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices;ECS Journal of Solid State Science and Technology;2019

4. Inelastic H Atom Scattering from Ultrathin Aluminum Oxide Films Grown by Atomic Layer Deposition on Pt(111);The Journal of Physical Chemistry C;2018-04-23

5. Enhanced reliability and capacitance stability of ZrO2-based decoupling capacitors by interface doping with Al2O3;Microelectronic Engineering;2017-06

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